cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 1/7 BCP56L3 c y s t ek product s pecification general purpose npn epitaxial planar transistor BCP56L3 description general purpose mainly intended for use in medium pow er industrial application and for audio amplifier output stage. features ? high collector current and low v ce(sat) ? complement to bcp53l3 ? pb-free package symbol outline BCP56L3 sot-223 b base c collector e emitter b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collecto r -b ase v o ltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current(dc) i c 1 a collector current(pulse) i cp 1.5 a power dissipation @t c =25 pd 2 w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c http://
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 2/7 BCP56L3 c y s t ek product s pecification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 100 - - v i c =100 a bv ceo 80 - - v i c =10ma bv ebo 5 - - v i e =10 a i cbo - - 100 na v cb =80v i ebo - - 100 na v eb =5v *v ce(sat) 1 - 0.15 0.3 v i c =500ma, i b =50ma *v ce(sat) 2 - - 0.6 v i c =1a, i b =50ma *v be(sat) - - 1.2 v i c =1a, i b =50ma *v be(on) - - 1.0 v v ce =2v, i c =500ma *h fe 1 100 - - - v ce =2v, i c =5ma *h fe 2 100 - 400 - v ce =2v, i c =150ma *h fe 3 45 - - - v ce =2v, i c =500ma f t - 125 - mhz v ce =10v, i c =50ma, f=100mhz cob - - 10 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2% classification of h fe 2 rank -16 -25 range 100~250 160~400 ordering information device package shipping marking BCP56L3 sot-223 (pb-free) 2500 pcs / tape & reel aj
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 3/7 BCP56L3 c y s t ek product s pecification typical characteristics c u rre nt g a i n v s c ol l e c t or c urre nt 10 10 0 10 00 1 10 100 1000 c o l l e c t or c u rre n t -- -ic (ma ) c u rre n t g a i n - --h f e hfe vce=5v vce=2v vce=1v s a t u ra t i on v ol t a ge v s c ol l e c t or c urre n t 10 100 1000 1 10 1 00 10 00 c o l l e c t o r c u r r e n t ---i c ( ma ) s a t u ra t i o n v o l t a g e -(mv ) vcesat ic=10ib ic=25ib ic=20ib s a tu r a ti o n v o ltag e v s c o l l ecto r c u r r en t 100 10 00 100 00 1 10 1 00 10 00 1 000 0 c o l l e c t or c u rre n t --- ic (ma ) s a t u ra t i on v o l t a g e -(mv ) vbesat@ic=10ib o n v o l t a ge vs col l e c t o r c urre nt 100 100 0 1000 0 1 1 0 100 1 000 10000 c o l l e c t or c u rre n t --- ic (ma ) on vo l ta g e - ( m v) vbeon@vce=2v t ypi c a l c u t o ff curre nt c ha ra c t e r i s t i c s 10 100 1 000 02 0 4 0 6 0 8 0 1 0 0 transition frequency vs collector current 10 10 0 100 0 1 10 10 0 1000 c o l l e c t o r c urre n t ---ic ( m a ) t r a n s i t i o n f re q u e n c y - --ft (m h z ) c o l l ecto r b as e v o l t ag e- - v c b ( v ) c-b cutoff current---icbo(na) tj=150c
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 4/7 BCP56L3 c y s t ek product s pecification typical characteristics(cont.) power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 5/7 BCP56L3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 6/7 BCP56L3 c y s t ek product s pecification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c304 l3 issued date : 20 07.05.04 revised date :20 12.02.22 page no. : 7/7 BCP56L3 c y s t ek product s pecification sot-223 dimension *: typical 3 2 1 f b a c d e g h a1 a2 i style: pin 1.base 2.collector 3.emitter marking: 3-l ead sot - 223 pla s tic surface mou n ted packa g e cys t ek pa ckage code: l3 aj device code date code inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1142 0.1220 2.90 3.10 g 0.0551 0.0709 1.40 1.80 b 0.2638 0.2874 6.70 7.30 h 0.0098 0.0138 0.25 0.35 c 0.1299 0.1457 3.30 3.70 i 0.0008 0.0039 0.02 0.10 d 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - e *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o f 0.2480 0.2638 6.30 6.70 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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